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Philips Semiconductors
Product specification
Rectifier diodes Schottky barrier
FEATURES
* Low forward volt drop * Fast switching * Reverse surge capability * High thermal cycling performance * Low thermal resistance
PBYL1025B series
SYMBOL
QUICK REFERENCE DATA VR = 20 V/ 25 V
k tab
a 3
IF(AV) = 10 A VF 0.4 V
GENERAL DESCRIPTION
Schottky rectifier diodes intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The PBYL1025B series is supplied in the SOT404 surface mounting package.
PINNING
PIN 1 2 3 tab DESCRIPTION no connection cathode1 anode
SOT404
tab
2
cathode
1 3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER VRRM VRWM VR IF(AV) IFRM IFSM Peak repetitive reverse voltage Working peak reverse voltage Continuous reverse voltage Average rectified forward current Repetitive peak forward current Non-repetitive peak forward current Peak repetitive reverse surge current Operating junction temperature Storage temperature CONDITIONS PBYL10 Tmb 119 C square wave; = 0.5; Tmb 132 C square wave; = 0.5; Tmb 132 C t = 10 ms t = 8.3 ms sinusoidal; Tj = 125 C prior to surge; with reapplied VRRM(max) pulse width and repetition rate limited by Tj max - 65 MIN. 20B 20 20 20 10 20 130 150 1 150 175 MAX. 25B 25 25 25 UNIT V V V A A A A A C C
IRRM Tj Tstg
1 it is not possible to make connection to pin 2 of the SOT428 package October 1998 1 Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes Schottky barrier
THERMAL RESISTANCES
SYMBOL PARAMETER Rth j-mb Rth j-a Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS
PBYL1025B series
MIN. -
TYP. MAX. UNIT 50 3 K/W K/W
pcb mounted, minimum footprint, FR4 board
-
ELECTRICAL CHARACTERISTICS
Tj = 25 C unless otherwise specified SYMBOL PARAMETER VF Forward voltage CONDITIONS IF = 10 A; Tj = 150C IF = 10 A; Tj = 125C IF = 20 A; Tj = 125C IF = 20 A VR = VRWM VR = VRWM; Tj = 100C VR = 5 V; f = 1 MHz, Tj = 25C to 125C MIN. TYP. MAX. UNIT 0.33 0.39 0.54 0.57 0.2 15 580 0.4 0.45 0.61 0.64 5 30 V V V V mA mA pF
IR Cd
Reverse current Junction capacitance
October 1998
2
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes Schottky barrier
PBYL1025B series
10 8 6
Forward dissipation, PF (W) Vo = 0.29 V Rs = 0.016 Ohms
PBYL1025
Tmb(max) / C
120 126 132
100mA
Reverse current, IR (A) 125 C
PBYR725D
D = 1.0 0.5 0.2 0.1
10mA 100 C 1mA 75 C 50 C
4
I tp D= tp T
138
100uA Tj = 25 C
2 0
T t
144 150 15
10uA
0
5 10 Average forward current, IF(AV) (A)
1uA
0
5
10 15 Reverse voltage, VR (V)
20
25
Fig.1. Maximum forward dissipation PF = f(IF(AV)); square current waveform where IF(AV) =IF(RMS) x D.
Fig.4. Typical reverse leakage current; IR = f(VR); parameter Tj
8 7 6 5 4 3 2 1 0
Forward dissipation, PF (W) Vo = 0.29 V Rs = 0.016 Ohms
PBYL1025
Tmb(max) / C
126
10000
Junction capacitance, Cd (pF)
PBYR725D
a = 1.57 4 2.8 2.2 1.9
132
138
1000
144
0
2
4 6 8 Average forward current, IF(AV) (A)
150 10
100
1
10 Reverse voltage, VR (V)
100
Fig.2. Maximum forward dissipation PF = f(IF(AV)); square current waveform where IF(AV) =IF(RMS) x D.
Forward current, IF (A) Tj = 25 C Tj = 125 C typ 10 max PBYR725D
Fig.5. Typical junction capacitance; Cd = f(VR); f = 1 MHz; Tj = 25C to 125 C.
Transient thermal impedance, Zth j-mb (K/W)
15
10
1
0.1
5
0.01
P D tp D=
tp T t
0
0
0.2
0.4 0.6 Forward voltage, VR (V)
0.8
1
0.001 1us
T
10us
100us 1ms 10ms 100ms 1s 10s pulse width, tp (s) PBYL1025
Fig.3. Typical and maximum forward characteristic IF = f(VF); parameter Tj
Fig.6. Transient thermal impedance; Zth j-mb = f(tp).
October 1998
3
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes Schottky barrier
MECHANICAL DATA
Dimensions in mm Net Mass: 1.4 g
10.3 max 4.5 max 1.4 max
PBYL1025B series
11 max 15.4
2.5 0.85 max (x2) 2.54 (x2)
0.5
Fig.7. SOT404 : centre pin connected to mounting base.
MOUNTING INSTRUCTIONS
Dimensions in mm
11.5
9.0
17.5 2.0
3.8
5.08
Fig.8. SOT404 : soldering pattern for surface mounting.
Notes 1. Epoxy meets UL94 V0 at 1/8".
October 1998
4
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes Schottky barrier
DEFINITIONS
Data sheet status Objective specification Product specification Limiting values
PBYL1025B series
This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. (c) Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
October 1998
5
Rev 1.100

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